| PART |
Description |
Maker |
| SGB30UFSMS SGB30UFSMSS SGB30UFSMSTX SGB30UFSMSTXV |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc
|
| SGB30UFSMS SGB10UFSMS SGB15UFSMS SGB20UFSMS SGB25U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SGB10UFSMS SGB15UFSMS SGB25UFSMS SGB20UFSMS SGB30U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc.
|
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IDT75K62134 IDT75K52134 |
4.5M and 9M Network Search Engine (NSE) with QDR?/a> Interface
9M Network Search Engine (NSE) with Integrated QDR Interface
4.5M Network Search Engine (NSE) with Integrated QDR Interface.
Network Search Engines with Integrated NPU Interface
4.5M and 9M Network Search Engine (NSE) with QDR⑩ Interface
4.5M and 9M Network Search Engine (NSE) with QDRInterface
4.5M and 9M Network Search Engine (NSE) with QDR Interface
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KBPC3501 KBPC3504W KBPC3506 KBPC35005W KBPC3502W K |
(KBPC35005 - KBPC3510) CURRENT 35.0 Amperes VOLTAGE 50 to 1000 Volts
(KBPC35005W - KBPC3510W) CURRENT 35.0 Amperes VOLTAGE 50 to 1000 Volts
|
DEC
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| IDT75K62413 |
9M Integrated Network Search Engine (NSE) with Quad AMCC XSC Interface
9M Network Search Engine (NSE) with Quad AMCC XSC Interface
From old datasheet system
|
IDT
Integrated Device Technology
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| SPD55501 SPD5554SMSS SPD5554SMSTX SPD5554SMSTXV SP |
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 5 A, 1000 V, SILICON, RECTIFIER DIODE
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 1.3 A, 1000 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| DB207S DB206S DB205S DB201S DB202S DB203S DB204S D |
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
|
RECTRON LTD
Rectron Semiconductor
|
